2013

por admin | May 19, 2013 | Publications, Uncategorized

A portable telescope based on the ALIBAVA system for test beam studies
J. Bernabeu, G. Casse, C. Garcia, A. Greenall, C. Lacasta, M. Lozano, S. Marti-Garcia, G. Pellegrini, J. Rodriguez, M. Ullan, I. Tsurin
Nuclear Inst. & Meth. A, Vol. 732, 21 December 2013, Pages 130–133
Proceedings of the Vienna Conference on Instrumentation 2013
doi:10.1016/j.nima.2013.06.067

Abstract: A test beam telescope has been built using the ALIBAVA system to drive its data acquisition. The basic telescope planes consist of four XYT stations. Each station is built from a detector board with two strip sensors, mounted one in each side (strips crossing at 90°). The ensemble is coupled to an ALIBAVA daughter board. These stations act as reference frame and allow a precise track reconstruction. The system is triggered by the coincidence signal of the two scintillators located up and down stream. The telescope can hold several devices under tests. Each ALIBAVA daughter board is linked to its corresponding mother board. The system can hold up to 16 mother boards. A master board synchronizes and controls all the mother boards and collects their data. The off-line analysis software has been developed to study the charge collection, cluster width, tracking efficiency, resolution, etc., of the devices under test. Moreover, the built-in ALIBAVA TDC allows the analysis of the time profile of the device signal. The ALIBAVA telescope has been successfully operated in two test runs at the DESY and CERN-SPS beam lines.

Signal and charge collection efficiency of n-in-p strip detectors after mixed irradiation to HL-LHC fluences
S. Kuehn, T. Barber, G. Casse, P. Dervan, A. Driewer, D. Forshaw, T. Huse, K. Jakobs, U. Parzefall
Nuc. Instr. Meth. A , Volume 730, 1 December 2013, Pages 58-61
doi:10.1016/j.nima.2013.04.068

Abstract: For the year 2020, an upgrade of the LHC with a factor ten increase in luminosity is planned. The resulting severe radiation doses for the ATLAS tracker demand extremely radiation tolerant detectors. In this study six planar n-in-p strip sensors produced by Hamamatsu Photonics were irradiated in consecutive irradiation steps with pions of 280 Mev/c, protons of 25 Mev/c and reactor neutrons resulting in a combined fluence of up to 3×1015 1 MeV neutron equivalent particles per square centimeter (neq/cm2)(neq/cm2). This particle composition and fluence corresponds to the qualification limit specified by the ATLAS experiment for the outer pixel layers (assuming an integrated luminosity of 3000 fb-1). The View the MathML source320µm thick devices are investigated using electrons from a 90Sr source. After each irradiation step both charge collection efficiency and noise measurements have been performed using the ALIBAVA readout system, which is based on analogue ASIC chip clocked at 40 MHz. Measurements of the signal and signal-to-noise ratio of detectors will be given after the sensors were exposed to radiation that both in fluence and composition are corresponding to the expectations for the HL-LHC trackers. Conclusions will be drawn on their operation in the ATLAS inner detector upgrade.

A charge collection study with dedicated RD50 charge multiplication sensors
C. Betancourt, T. Barber, M. Hauser, K. Jakobs, S. Kuehn, U. Parzefall, S. Wonsak
Nuc. Instr. Meth. A , Volume 730, 1 December 2013, Pages 62-65
doi:10.1016/j.nima.2013.05.186

Abstract: This study investigates the charge collection efficiency of silicon strip detectors, produced by MICRON Semiconductor Co., Ltd. within the CERN RD50 collaboration, designed specifically to understand the effect of design parameters on the onset and magnitude of charge multiplication. Charge collection measurements are performed before and after irradiation with a proton fluence of 1×1015 1 MeV neq/cm2 and neutron fluence ranging from 1–5×1015 neq/cm2. Structures on these devices include varying diffusion times and energies for the implantation process, different sensor thicknesses, the use of intermediate biased or floating strips between the readout strips, and several different strip width and pitch geometries. The charge collection for these devices is studied as a function of the bias voltage, looking for indications of charge multiplication. Results are compared to standard float zone 300µm thick silicon strip sensors having a strip width of 25µm and pitch of 80µm.

Degradation of charge sharing after neutron irradiation in strip silicon detectors with different geometries
G. Casse, P. Dervan, D. Forshaw, A. Greenall, T. Huse, I. Tsurin, M. Wormald, Members of the CERN/RD50 collaboration
Nuc. Instr. Meth. A , Volume 730, 1 December 2013, Pages 54-57
doi:10.1016/j.nima.2013.05.158

Abstract: The aim of the CERN/RD50 collaboration is the improvement of the radiation tolerance of semiconductor detectors for future experiments at high-luminosity colliders. In the RD50 framework, evidence of enhanced signal charge in severely irradiated silicon detectors (diodes, segmented planar and 3D devices) was found. The underlying mechanism was labelled charge multiplication. This has been one of the most exciting results from the research activity of RD50 because it could allow for a greatly extended radiation tolerance, if the mechanism is to be found controllable and tuneable. The charge multiplication mechanism is governed by impact ionisation from electrons drifting in high electric field. The electric field profile is influenced by the geometry of the implanted electrodes. In order to investigate the influence of the diode implantation geometry on charge multiplication, the RD50 collaboration has commissioned the production of miniature microstrip silicon sensors with various choices of strip pitch and strip width over pitch (w/p) ratios. Moreover, some of the sensors were produced interleaving readout strips with dummy intermediate ones in order to modify the electric field profile. These geometrical solutions can influence both charge multiplication and charge sharing between adjacent strips. The initial results of this study are here presented.

The Birmingham Irradiation Facility
P. Dervan, R. French, P. Hodgson, H. Marin-Reyes, J. Wilson
Nuc. Instr. Meth. A , Volume 730, 1 December 2013, Pages 101-104
doi:10.1016/j.nima.2013.05.156

Abstract: At the end of 2012 the proton irradiation facility at the CERN PS will shut down for two years. With this in mind, we have been developing a new ATLAS scanning facility at the University of Birmingham Medical Physics cyclotron. With proton beams of energy approximately 30 MeV, fluences corresponding to those of the upgraded Large Hadron Collider (HL-LHC) can be reached conveniently. The facility can be used to irradiate silicon sensors, optical components and mechanical structures (e.g. carbon fibre sandwiches) for the LHC upgrade programme. Irradiations of silicon sensors can be carried out in a temperature controlled cold box that can be scanned through the beam. The facility is described in detail along with the first tests carried out with mini (1×1 cm2) silicon sensors.

Scribe–cleave–passivate (SCP) slim edge technology for silicon sensors
V. Fadeyev, H.F.-W. Sadrozinski, S. Ely, J.G. Wright, M. Christophersen, B.F. Phlips, G. Pellegrini, S. Grinstein, G.-F. Dalla Betta, M. Boscardin, R. Klingenberg, T. Wittig, A. Macchiolo, P. Weigell, D. Creanza, R. Bates, A. Blue, L. Eklund, D. Maneuski, G. Stewart, et al.
Nuc. Instr. Meth. A , Volume 731, 11 December 2013, Pages 260-265
doi:10.1016/j.nima.2013.03.046

Abstract: We are pursuing scribe–cleave–passivate (SCP) technology of making “slim edge” sensors. Such sensors have only a minimal amount of inactive peripheral region, which benefits construction of large-area tracker and imaging systems. Key application steps of this method are surface scribing, cleaving, and passivation of the resulting sidewall. We are working on developing both the technology and physical understanding of the processed devices performance. In this paper we begin by reviewing the manufacturing options of SCP technology. Then we show new results regarding the technology automation and device physics performance. The latter includes charge collection efficiency near the edge and radiation hardness study. We also report on the status of devices processed at the request of the RD50 collaborators.

Characterization of 3D-DDTC strip sensors with passing-through columns
M. Povoli, C. Betancourt, M. Boscardin, G.-F. Dalla Betta, G. Giacomini, B. Lecini, S. Kuehn, U. Parzefall, N. Zorzi
Nuc. Instr. Meth. A , Volume 730, 1 December 2013, Pages 38-43
doi:10.1016/j.nima.2013.04.064

Abstract: We report on the pre-irradiation electrical and functional characterization of newly developed 3D silicon strip detectors fabricated at FBK. Critical layout aspects present in the previous version of the technology were solved, and the new sensors are showing encouraging results both in terms of electrical properties and charge collection efficiency.

3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production
C. Da Vià, M. Boscardin, G.-F. Dalla Betta, G. Darbo, C. Fleta, C. Gemme, G. Giacomini, P. Grenier, S. Grinstein, T.-E. Hansen, J. Hasi, C. Kenney, A. Kok, A. La Rosa, A. Micelli, S. Parker, G. Pellegrini, D.-L. Pohl, M. Povoli, E. Vianello, N. Zorzi, S.J. Watts
Nuclear Inst. & Meth. A, Vol. 699, 21 January 2013, Pages 18-21
doi:10.1016/j.nima.2012.05.070

Abstract: 3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

Embedded pitch adapters for the ATLAS Tracker Upgrade
M. Ullan, V. Benitez, G. Pellegrini, C. Fleta, M. Lozano, C. Lacasta, U. Soldevila, C. Garcia
Nuc. Instr. Meth. A , Volume 732, 21 December 2013, Pages 178–181
doi:10.1016/j.nima.2013.07.078

Abstract: In the current ATLAS tracker modules, sensor bonding pads are placed on their corresponding strips and oriented along the strips. This creates a difference in pitch and orientation between sensor bond pads and readout electronics bond pads. Therefore, a pitch adapter (PA), or “fan-in”, is needed. The purpose of these PA is the electrical interconnection of every channel from the detector bonding pads to the read-out chips, adapting the different pad pitch. Our new approach is to build those PAs inside the sensor; this is what we call Embedded Pitch Adapters. The idea is to use an additional metal layer in order to define a new group of pads, connected to the strips via tracks with the second metal. The embedded PAs have been fabricated on 4-in. prototype sensors for the ATLAS-Upgrade Endcap Tracker to test their performance and suitability. The tests confirm proper fabrication of the second metal tracks, and no effects on detector performance. No indication of cross-talk between first and second metal channels has been observed. A small indication of possible signal pick-up from the bulk has been observed in a few channels, which needs to be further investigated.

Charge multiplication in irradiated segmented silicon detectors with special strip processing
G. Casse, D. Forshaw, T. Huse, I. Tsurin, M. Wormald, M. Lozano, G. Pellegrini
Nuclear Inst. & Meth. A, Vol. 699, 21 January 2013, Pages 9-13
doi:10.1016/j.nima.2012.04.033

Abstract: Charge multiplication in severely irradiated silicon detectors is now a well proven effect that enhances their charge collection and makes them operable up to the doses anticipated for future super-colliders (like the high luminosity LHC at CERN). The effect is well documented but not completely understood. The multiplication is caused by impact ionisation due to hot electrons moving in the high electric field that develops near the junction in the irradiated sensors. The details of the electric field profile in the silicon bulk are not available due to the unknown spatial distribution of the inhomogeneous effective space charge in the hadron irradiated silicon bulk. The gradient of the effective space charge distribution is crucial for the formation of high electric field regions where the multiplication takes place. The electric field might be influenced by the implant forming the n–p junction and by a non-homogenous bulk space charge near the junction. Deep n+ structures (junction) could enhance or reduce the multiplication effect. Also an altered doping gradient (obtainable for example by a graded p-doping between the junction and the p-bulk) could achieve the same results. In order to achieve enhanced charge multiplication in microstrip detectors the junction has been shaped by mean of deep p-doping diffusion and of trenches etched in the silicon bulk and filled with n+ doped polysilicon to create a deep junction. We report here the result obtained with these methods before and after various doses of neutron irradiation.

ALIBAVA silicon microstrip readout system for educational purposes
J. Bernabeu,G. Casse, C. Garcia, Greenall, C. Lacasta, M. Lozano, G. Pellegrini, J. Rodriguez, S. Marti-Garcia, M. Ullan, IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS-MIC) 2013
doi:10.1109/NSSMIC.2013.6829803

Abstract: The ALIBAVA is a compact and portable system for characterization of silicon microstrip radiation detectors. Actually, the ALIBAVA system is conceived to easily characterize multichannel semiconductor detectors, providing high sensitivity to low signals and high speed. The front-end electronics is based on a low noise ASIC with 128 input channels. Beyond its scientific and sensor R&D applications, the system can also be used in instrumentation lectures at the university teaching laboratories. New features of the system makes it more suitable for its handling by undergraduate and postgraduate students (following lectures on radiation detection instrumentation), who will greatly benefit in their instruction by using this system to learn about the properties of microstrip sensors and signal formation in those devices which are extensively used in a wide range of fields as High Energy Physics, Nuclear Physics, Medical Physics, etc.

Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam
R. Bates, A. Blue, M. Christophersen, L. Eklund, S. Ely, V. Fadeyev, E. Gimenez, V. Kachkanov, J. Kalliopuska, A. Macchiolo, D. Maneuski, B. F. Phlips, H. Sadrozinski, G. Stewart, N. Tartoni, R. M. Zain
Journal of Instrumentation, 2013, Vol. 8, Issue 01, Article P01018
doi:10.1088/1748-0221/8/01/P01018

Abstract: Reduced edge or “edgeless” detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 µm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 µm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 µm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 µm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

2011

por admin | Jun 16, 2011 | Publications, Uncategorized

Development of a beam test telescope based on the Alibava readout system

R. Marco-Hernandez (for the Alibava Collaboration)
Journal of Instrumentation, 2011, Vol. 6 Issue 1, Article C01002
doi:10.1088/1748-0221/6/01/C01002

Abstract: A telescope for a beam test have been developed as a result of a collaboration among the University of Liverpool, Centro Nacional de Microelectrónica (CNM) of Barcelona and Instituto de Física Corpuscular (IFIC) of Valencia. This system is intended to carry out both analogue charge collection and spatial resolution measurements with different types of microstrip or pixel silicon detectors in a beam test environment. The telescope has four XY measurement as well as trigger planes (XYT board) and it can accommodate up to twelve devices under test (DUT board). The DUT board uses two ASIC chips for the readout of chilled silicon detectors. The board could operate in a self-triggering mode. The board features a temperature sensor and it can be mounted on a rotary stage. A peltier element is used for cooling the DUT. Each XYT board measures the track space points using two silicon strip detectors connected to two ASIC chips. It can also trigger on the particle tracks in the beam test. The board includes a CPLD which allows for the synchronization of the trigger signal to a common clock frequency, delaying and implementing coincidence with other XYT boards. An Alibava mother board is used to read out and to control each XYT/DUT board from a common trigger signal and a common clock signal. The Alibava board has a TDC on board to have a time stamp of each trigger. The data collected by each Alibava board is sent to a master card by means of a local data/address bus following a custom digital protocol. The master board distributes the trigger, clock and reset signals. It also merges the data streams from up to sixteen Alibava boards. The board has also a test channel for testing in a standard mode a XYT or DUT board. This board is implemented with a Xilinx development board and a custom patch board. The master board is connected with the DAQ software via 100M Ethernet. Track based alignment software has also been developed for the data obtained with the DAQ software.

Comparative measurements of highly irradiated n-in-p and p-in-n 3D silicon strip detectors
M. Köhler, R. Bates, C. Fleta, K. Jakobs, M. Lozano, C. Parkes, U. Parzefall, G. Pellegrini, J. Preiss
Nuclear Inst. & Meth. A, Vol. 659, Issue 1, 11 Dec. 2011, Pages 272-281
doi:10.1016/j.nima.2011.08.041

Abstract: Silicon detectors in 3D technology are a candidate for applications in environments requiring an extreme radiation hardness, as in the innermost layers of the detectors at the proposed High-Luminosity LHC. In 3D detectors, the electrodes are made of columns etched into the silicon perpendicular to the surface. This leads to higher electric fields, a smaller depletion voltage and a reduced trapping probability of the charge carriers compared to standard planar detectors. In this article, the signal and the noise of irradiated n-in-p and p-in-n 3D silicon strip detectors are compared. The devices under test have been irradiated up to a fluence of 2×10¹⁶ 1 MeV neutron equivalent particles per square centimetre (n_eq/cm²), which corresponds to the fluence expected for the inner pixel detector layers at the High-Luminosity LHC. A relative charge collection efficiency of approximately 70% was obtained even after the highest irradiation fluence with both detector types. The influence of different temperatures on the signal and the noise is investigated and results of annealing measurements are reported.

Campaign to identify the future CMS tracker baseline
K.-H. Hoffmann (for the CMS Tracker Sensor Working Group)
Nuclear Inst. & Meth. A, Vol. 658, Issue 1, 1 December 2011, Pages 30-35
doi:10.1016/j.nima.2011.05.028

Abstract: CMS has started a campaign to identify the future sensor technology baseline for the Tracker Upgrade Phase II. A large variety of 6-in. wafers of different thicknesses and technologies have been ordered. The sensor properties and especially the behavior after irradiation will be investigated for floatzone, magnetic Czochralski and epitaxial silicon material with dedicated test structures. The sensors come in p-in-n and n-in-p versions. The p-stop as well as p-spray isolation technologies will be explored for the n-in-p type sensors. Some additional wafers will come with an additional routing in a second metal layer on selected structures. Approximately one half of these wafers have already been delivered. Pre-qualification has just started.

Characterisation of “n-in-p” pixel sensors for high radiation environments
I. Tsurin, A. Affolder, P.P. Allport, G. Casse, V. Chmill, T. Huse, M. Wormald
Nuclear Inst. & Meth. A, Vol. 650, Issue 1, 11 September 2011, Pages 140-144
doi:10.1016/j.nima.2010.12.206

Abstract: This work presents the first held at Liverpool University measurements of pixel sensors with n-type readout implant in the p-type bulk before and after irradiation of samples by 24 GeV protons to doses 7×10¹⁵ and 1.5×10¹⁶ protons/cm². A comparison is given for two measurement techniques; one based on the FE-I3 readout chip designed for the ATLAS and the other using the ASIC chip developed for the LHCb experiments at CERN.

Measurements with Irradiated 3D Silicon Strip Detectors
M. Köhler, R. Bates, G.-F. Dalla Betta, C. Fleta, J. Härkönen, K. Jakobs, M. Lozano, T. Mäenpää, H. Moilanen, C. Parkes, U. Parzefall, G. Pellegrini, H. Sadrozinski, L. Spiegel, L. Wiik
Nuclear Physics B – Proc. Suppl., Vol. 215, Issue 1, June 2011, Pages 247-249
doi:10.1016/j.nuclphysbps.2011.04.021

Abstract: For the unprecedentedly high radiation level at the sLHC, the luminosity upgrade of the LHC, new tracking detectors are investigated. Among different approaches, silicon detectors in 3D technology constitute a promising option. Columnar electrodes are etched into the substrate, therefore the distance for charge collection and depletion is decoupled from the detector thickness. Thus, two of the detrimental effects caused by radiation in silicon (increased depletion voltage and charge carrier trapping) can be reduced. Results of measurements with irradiated 3D silicon strip detectors produced by IMB-CNM are presented.

Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes
N. Pacifico, I. Dolenc Kittelmann, M. Fahrer, M. Moll, O. Militaru
Nuclear Inst. & Meth. A, Vol. 658, Issue 1, 1 December 2011, Pages 55-60
doi:10.1016/j.nima.2011.03.026

Abstract: Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280 Ω cm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8×10¹⁵/cm². The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

Performance of thin pixel sensors irradiated up to a fluence of and development of a new interconnection technology for the upgrade of the ATLAS pixel system
A. Macchiolo, L. Andricek, M. Beimforde, H.-G. Moser, R. Nisius, R.H. Richter, P. Weigell
Nuclear Inst. & Meth. A, Vol. 650, Issue 1, 11 September 2011, Pages 145-149
doi:10.1088/1748-0221/6/11/C11022

Abstract: The electrical properties of hadron irradiated silicon detectors change over several years after irradiation. This annealing process has a strong dependence on temperature and it can be accelerated or decelerated by lowering or elevating the temperature at which the sensors are kept. This is exploited to investigate the long term behaviours of irradiated silicon detectors that are, or will be, installed in the experiment at the current and upgraded LHC at CERN. Elevated temperatures (up to 80°C) are used to accelerate the effect of annealing to study the expected changes of the sensor performances over several years of room temperature equivalent time. Low temperatures are applied to the sensors also when not operated to suppress undesired effects of annealing. The acceleration factors with respect to nominal room temperature (RT = 20°C) have been established monitoring the changes of the capacitance-voltage characteristics (CV) with time at various temperatures. In the experiments, the maximum high temperature envisaged out of operation cannot exceed much 20°C. It is important to measure the changes of the relevant parameters (charge collection reverse current, noise) at this temperature to verify the annealing behaviours in realistic conditions for planning the operation scenario (i.e. bias voltage and temperature during and outside operation) of the silicon sensors. We show here the study of room temperature annealing of the charge collection, reverse current and noise of silicon microstrip detectors after two doses of hadron irradiation (2 and 10 × 10¹⁵ n_eq cm⁻²) . These doses are chosen to represent the expected levels in the future upgrade of the LHC at CERN (High Luminosity LHC, HL-LHC) for the microstrip and pixel layers. The measurements show that a suitable choice of annealing time at 20°C can partially recover the degraded charge collection and reduce the reverse current after a given dose of hadron irradiation.

Changes of the particle detection properties of irradiated silicon microstrip sensors after room temperature annealing
G. Casse, A. Affolder, P. P. Allport, V. Chmill, D. Forshaw, A. Greenall, I. Tsurin, T. Huse
Journal of Instrumentation, 2011, vol. 6, Issue 11, Article C11022
Proceedings of the 13th International Workshop on Radiation Imaging Detectors (IWORID)
doi:10.1088/1748-0221/6/11/C11022

Abstract: The electrical properties of hadron irradiated silicon detectors change over several years after irradiation. This annealing process has a strong dependence on temperature and it can be accelerated or decelerated by lowering or elevating the temperature at which the sensors are kept. This is exploited to investigate the long term behaviours of irradiated silicon detectors that are, or will be, installed in the experiment at the current and upgraded LHC at CERN. Elevated temperatures (up to 80°C) are used to accelerate the effect of annealing to study the expected changes of the sensor performances over several years of room temperature equivalent time. Low temperatures are applied to the sensors also when not operated to suppress undesired effects of annealing. The acceleration factors with respect to nominal room temperature (RT = 20°C) have been established monitoring the changes of the capacitance-voltage characteristics (CV) with time at various temperatures. In the experiments, the maximum high temperature envisaged out of operation cannot exceed much 20°C. It is important to measure the changes of the relevant parameters (charge collection reverse current, noise) at this temperature to verify the annealing behaviours in realistic conditions for planning the operation scenario (i.e. bias voltage and temperature during and outside operation) of the silicon sensors. We show here the study of room temperature annealing of the charge collection, reverse current and noise of silicon microstrip detectors after two doses of hadron irradiation (2 and 10 × 1015 neq cm−2) . These doses are chosen to represent the expected levels in the future upgrade of the LHC at CERN (High Luminosity LHC, HL-LHC) for the microstrip and pixel layers. The measurements show that a suitable choice of annealing time at 20°C can partially recover the degraded charge collection and reduce the reverse current after a given dose of hadron irradiation.

2010

por admin | Jun 16, 2010 | Publications, Uncategorized

A portable readout system for silicon microstrip sensors

R. Marco-Hernández
Nuclear Inst. & Meth. A, Vol. 623, Issue 1, 1 November 2010, Pages 207-209
doi:10.1016/j.nima.2010.02.197

Abstract: This system can measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system is able to operate with different types (p- and n-type) and different sizes (up to 3 cm²) of microstrip silicon sensors, both irradiated and non-irradiated. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format. The main characteristics of the system are described. Results of measurements acquired with n- and p-type detectors using both the laser and the radioactive source setup are also presented and discussed.

A beam test telescope based on the Alibava readout system
R. Marco-Hernandez, (for the Alibava Collaboration)
IEEE Nuclear Science Symposium and Medical Imaging Conference, (IEEE-NSS-MIC) Oct.-Nov, 2010
IEEE NSS-MIC Conference Record, pp.749-754,
doi: 10.1109/NSSMIC.2010.5873858

Abstract: A telescope for a beam test have been developed. The system is intended to measure the spatial resolution performance of different types of silicon detectors. The telescope has four XY measurement as well as trigger planes (XYT board). It can accommodate up to twelve devices under test (DUT board). The DUT board uses two ASIC chips for the readout of chilled DUT, microstrip or pixel silicon detectors. The XYT board triggers on the particle tracks in the beam test. It also measures the track space points using two silicon strip detectors connected to two ASIC chips. An Alibava mother board is used to read out and to control each XYT/DUT board from a common trigger signal and clock signal. A master board distributes the trigger, clock and reset signals. It also merges the data streams from up to sixteen Alibava boards. The master board is connected with the DAQ software via 100M Ethernet. Track based alignment software has also been developed for the data obtained with the DAQ software.

Characterization of irradiated P-type silicon detectors by the ALIBAVA system
M. Miñano, C. García, C. Lacasta, R. Marco-Hernández, S. Martí-García, U. Soldevila
Nuclear Inst. & Meth. A, Vol. 617, Issues 1–3, 11–21 May 2010, Pages 565-567
doi:10.1016/j.nima.2009.09.040

Abstract: The ATLAS Tracker System has been designed to withstand the radiation doses accumulated with 10 years of running at a LHC luminosity of . The operation under an upgraded luminosity of  (superluminous LHC) implies to upgrade the semiconductor tracking systems of the LHC experiments. The expected dose for the inner detector trackers at the superluminous LHC experiments is up to  equivalent neutron cm^-2 after the envisaged five years of operation. Investigations have showed arguments in favour of implementing the n-type strip readout on a p-type substrate (currently the Semiconductor Tracker, SCT, uses p-type strip readout on a n-type substrate). In order to evaluate the radiation damage p-type microstrip sensors have been irradiated with neutrons and protons at several fluxes up to . Electrical and charge collection efficiency measurements have been carried out by means of a radioactive source setup as well as by an infrared laser illumination and the measurements compared with a non-irradiated sensor as a reference. The ALIBAVA acquisition system has been used. It is a compact and portable system which contains two front-end readout ASIC chips to acquire the detector signals. One of the advantages of the ALIBAVA system is that it uses LHC speed electronics. Another one is that it performs a pulse by pulse and strip by strip analysis.

A module concept for the upgrades of the ATLAS pixel system using the novel SLID-ICV vertical integration technology
M. Beimforde, L. Andricek, A. Macchiolo, H.-G. Moser, R. Nisius, R. H. Richter, P. Weigell
Journal of Instrumentation, 2010, Vol. 5, Issue 12, Article C1202
doi: 10.1088/1748-0221/5/12/C12025

Abstract: The presented R&D activity is focused on the development of a new pixel module concept for the foreseen upgrades of the ATLAS detector towards the Super LHC employing thin n-in-p silicon sensors together with a novel vertical integration technology. A first set of pixel sensors with active thicknesses of 75 μm and 150 μm has been produced using a thinning technique developed at the Max-Planck-Institut für Physik (MPP) and the MPI Semiconductor Laboratory (HLL). Charge Collection Efficiency (CCE) measurements of these sensors irradiated with 26 MeV protons up to a particle fluence of 10¹⁶n_eqcm⁻² have been performed, yielding higher values than expected from the present radiation damage models. The novel integration technology, developed by the Fraunhofer Institut EMFT, consists of the Solid-Liquid InterDiffusion (SLID) interconnection, being an alternative to the standard solder bump-bonding, and Inter-Chip Vias (ICVs) for routing signals vertically through electronics. This allows for extracting the digitized signals from the back side of the readout chips, avoiding wire-bonding cantilevers at the edge of the devices and thus increases the active area fraction. First interconnections have been performed with wafers containing daisy chains to investigate the efficiency of SLID at wafer-to-wafer and chip-to-wafer level. In a second interconnection process the present ATLAS FE-I3 readout chips were connected to dummy sensor wafers at chip-to-wafer level. Preparations of ICV within the ATLAS readout chips for back side contacting and the future steps towards a full demonstrator module will be presented.

Development of a beam test telescope based on the Alibava readout system
Marco-Hernández R. (On behalf of the ALIBAVA Collaboration)

Topical Workshop on Electronics for Particle Physics, TWEPP. Aachen (Germany), Sep. 2010

doi:10.1088/1748-0221/6/01/C01002

Abstract: A telescope for a beam test have been developed as a result of a collaboration among the University of Liverpool, Centro Nacional de Microelectrónica (CNM) of Barcelona and Instituto de Física Corpuscular (IFIC) of Valencia. This system is intended to carry out both analogue charge collection and spatial resolution measurements with different types of microstrip or pixel silicon detectors in a beam test environment. The telescope has four XY measurement as well as trigger planes (XYT board) and it can accommodate up to twelve devices under test (DUT board). The DUT board uses two ASIC chips for the readout of chilled silicon detectors. The board could operate in a self-triggering mode. The board features a temperature sensor and it can be mounted on a rotary stage. A peltier element is used for cooling the DUT. Each XYT board measures the track space points using two silicon strip detectors connected to two ASIC chips. It can also trigger on the particle tracks in the beam test. The board includes a CPLD which allows for the synchronization of the trigger signal to a common clock frequency, delaying and implementing coincidence with other XYT boards. An Alibava mother board is used to read out and to control each XYT/DUT board from a common trigger signal and a common clock signal. The Alibava board has a TDC on board to have a time stamp of each trigger. The data collected by each Alibava board is sent to a master card by means of a local data/address bus following a custom digital protocol. The master board distributes the trigger, clock and reset signals. It also merges the data streams from up to sixteen Alibava boards. The board has also a test channel for testing in a standard mode a XYT or DUT board. This board is implemented with a Xilinx development board and a custom patch board. The master board is connected with the DAQ software via 100M Ethernet. Track based alignment software has also been developed for the data obtained with the DAQ software.

2009

por admin | Jun 16, 2009 | Publications, Uncategorized

A portable readout system for microstrip silicon sensors
R. Marco-Hernandez (on behalf of the ALIBAVA Collaboration)
IEEE Trans.Nucl.Sci. Vol. 56, pp.1642-1649, 2009
doi:10.1109/TNS.2009.2017261

Abstract: A readout system for microstrip silicon sensors has been developed. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format. The main characteristics of the system will be described. Results of measurements acquired with n-type and p-type non-irradiated detectors using both the laser and the radioactive source setup will be also presented and discussed. © 2006 IEEE.

Characterization of irradiated P-type silicon detectors by the ALIBAVA system
M. Minano, C. Garcia, C. Lacasta, R. Marco-Hernandez, S. Marti-Garcia, U. Soldevila
11th Pisa Meeting on Advanced Detectors, May 2009, Isola Elba, Italy
Nuclear Inst. & Meth. A, Vol. 617, Issue 1-3, Pages 565-567
doi:10.1016/j.nima.2009.09.040

2008

por admin | Jun 16, 2008 | Publications, Uncategorized

A Portable Readout System for Microstrip Silicon Sensors (ALIBAVA)
R. Marco-Hernandez (for the ALIBAVA Collaboration)
IEEE Nuclear Science Symposium and Medical Imaging Conference (IEEE NSS-MIC), Oct. 2008, Dresden, Germany
2008 IEEE NSS-MIC Conference Record, pp.3201-3208 (Pages: 2476-2483)
doi: 10.1109/NSSMIC.2008.4775030

Abstract: A readout system for microstrip silicon sensors has been developed as a result of a collaboration among the University of Liverpool, the CNM (Centro Nacional de Microelectrónica) of Barcelona and the IFIC (Instituto de Física Corpuscular) of Valencia. The name of this collaboration is ALIBAVA and it is integrated in the RD50 Collaboration. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256, as an analogue measurement. The system uses two ASIC chips to read out the detector(s). The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the SLHC, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the SLHC operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. This acquired data is sent by USB to be stored in a PC for a further processing. The hardware is a dual board based system. The daughterboard is a small board intended for containing two ASIC readout chips as well as fan-ins and detector support to interface the sensors. The motherboard is intended to process the data, to control the whole hardware and to communicate with the software by USB. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format file. The main characteristics of the system will be described. Results of measurements acquired with n-type and p-type non-irradiated detectors using both the laser and the radioactive source setup will be also presented and discussed.

A portable readout system for microstrip silicon sensors (ALIBAVA)
M. Lozano, G.Pellegrini, G. Casse
3th Workshop on Advanced Silicon Radiation Detectors, 14-16 April, Barcelona, Spain
http://indico.cern.ch/conferenceDisplay.py?confId=28165

Abstract: The meeting aims to provide an overview of the results obtained with p-type and 3D sensors and to consider these results in the light of the most demanding requirements at future detectors (both pixels and micro-strips). The organisers think it is important that colleagues from the 3D, pixel (planar and 3D) and microstrip communities meet to present state of the art developments in sensors and connectivity and have time to discuss these. This need emerged, for example, during the last 2007 ATLAS upgrade workshop in Valencia, where the density of the programme limited the time available for discussion. As part of the Barcelona meeting, it is our intention to present to potential users a 40MHz read-out data acquisition system based around the ASIC analogue chip, the ALIBAVA system