Alibava Systems offers Silicon Transmission Photodiodeswith very low absorption < 20% (4,5 keV) and very high efficiency.
Alibava Beam Intensity & Position Monitors are small, easy to install and passive photodiode circuit for X-ray beamdiagnostic applications. This solution provides actual X-ray beam intensity and position data through direct measurement. Furthermore, its transmission properties allow the online monitoring of the most critical beam parameter simultaneously with the data acquisition during anexperiment.
This valuable characteristic is achieved through its innovativethin detector with a very high X-ray transmission, goodresponsivity uniformity, stable, low absorption, and uniformradiation stability.
This Beam Intensity and Position Monitors were developed in collaboration with ALBA Synchrotron. Thanks to its unique characteristics Alibava Beam Intensity and Position Monitorsare especially useful not only for beamlines characterizationin synchrotrons but also for quality control of monochromaticX-ray machinery.
Features & Electronic Characterization
•P‐on‐N silicon detector
•Size: 4.4×4.4 mm2
•Thickness: 3 / 5 / 10 µm
•No external voltage needed
•Easily mounted in the experiment
•The beam intensity is measured by the output current
•Depletion layer thickness (bias = 0): 2.6 / 3.7 / 7 µm
Photodiode is based on a Silicon detector fabricated on ceramic substrate. Because of the low noise (dark current, in the pA range), very low radiation intensities can be measured reliably.
Single and 4 quadrants systems to perform intensity and position measurements.
Electronic Characterization
Experimental results
Wide energy range. Transmission level above 80% at 4,5 keV and 94% at 12 keV.
Responsivity uniformity better than 5% inside the active area.
Diferent Configurations
Alibava Beam Intensity & Position Monitors can beprovided in four different configurations:
