2011

por admin | Jun 16, 2011 | Publications, Uncategorized

Development of a beam test telescope based on the Alibava readout system

R. Marco-Hernandez (for the Alibava Collaboration)
Journal of Instrumentation, 2011, Vol. 6 Issue 1, Article C01002
doi:10.1088/1748-0221/6/01/C01002

Abstract: A telescope for a beam test have been developed as a result of a collaboration among the University of Liverpool, Centro Nacional de Microelectrónica (CNM) of Barcelona and Instituto de Física Corpuscular (IFIC) of Valencia. This system is intended to carry out both analogue charge collection and spatial resolution measurements with different types of microstrip or pixel silicon detectors in a beam test environment. The telescope has four XY measurement as well as trigger planes (XYT board) and it can accommodate up to twelve devices under test (DUT board). The DUT board uses two ASIC chips for the readout of chilled silicon detectors. The board could operate in a self-triggering mode. The board features a temperature sensor and it can be mounted on a rotary stage. A peltier element is used for cooling the DUT. Each XYT board measures the track space points using two silicon strip detectors connected to two ASIC chips. It can also trigger on the particle tracks in the beam test. The board includes a CPLD which allows for the synchronization of the trigger signal to a common clock frequency, delaying and implementing coincidence with other XYT boards. An Alibava mother board is used to read out and to control each XYT/DUT board from a common trigger signal and a common clock signal. The Alibava board has a TDC on board to have a time stamp of each trigger. The data collected by each Alibava board is sent to a master card by means of a local data/address bus following a custom digital protocol. The master board distributes the trigger, clock and reset signals. It also merges the data streams from up to sixteen Alibava boards. The board has also a test channel for testing in a standard mode a XYT or DUT board. This board is implemented with a Xilinx development board and a custom patch board. The master board is connected with the DAQ software via 100M Ethernet. Track based alignment software has also been developed for the data obtained with the DAQ software.

Comparative measurements of highly irradiated n-in-p and p-in-n 3D silicon strip detectors
M. Köhler, R. Bates, C. Fleta, K. Jakobs, M. Lozano, C. Parkes, U. Parzefall, G. Pellegrini, J. Preiss
Nuclear Inst. & Meth. A, Vol. 659, Issue 1, 11 Dec. 2011, Pages 272-281
doi:10.1016/j.nima.2011.08.041

Abstract: Silicon detectors in 3D technology are a candidate for applications in environments requiring an extreme radiation hardness, as in the innermost layers of the detectors at the proposed High-Luminosity LHC. In 3D detectors, the electrodes are made of columns etched into the silicon perpendicular to the surface. This leads to higher electric fields, a smaller depletion voltage and a reduced trapping probability of the charge carriers compared to standard planar detectors. In this article, the signal and the noise of irradiated n-in-p and p-in-n 3D silicon strip detectors are compared. The devices under test have been irradiated up to a fluence of 2×10¹⁶ 1 MeV neutron equivalent particles per square centimetre (n_eq/cm²), which corresponds to the fluence expected for the inner pixel detector layers at the High-Luminosity LHC. A relative charge collection efficiency of approximately 70% was obtained even after the highest irradiation fluence with both detector types. The influence of different temperatures on the signal and the noise is investigated and results of annealing measurements are reported.

Campaign to identify the future CMS tracker baseline
K.-H. Hoffmann (for the CMS Tracker Sensor Working Group)
Nuclear Inst. & Meth. A, Vol. 658, Issue 1, 1 December 2011, Pages 30-35
doi:10.1016/j.nima.2011.05.028

Abstract: CMS has started a campaign to identify the future sensor technology baseline for the Tracker Upgrade Phase II. A large variety of 6-in. wafers of different thicknesses and technologies have been ordered. The sensor properties and especially the behavior after irradiation will be investigated for floatzone, magnetic Czochralski and epitaxial silicon material with dedicated test structures. The sensors come in p-in-n and n-in-p versions. The p-stop as well as p-spray isolation technologies will be explored for the n-in-p type sensors. Some additional wafers will come with an additional routing in a second metal layer on selected structures. Approximately one half of these wafers have already been delivered. Pre-qualification has just started.

Characterisation of “n-in-p” pixel sensors for high radiation environments
I. Tsurin, A. Affolder, P.P. Allport, G. Casse, V. Chmill, T. Huse, M. Wormald
Nuclear Inst. & Meth. A, Vol. 650, Issue 1, 11 September 2011, Pages 140-144
doi:10.1016/j.nima.2010.12.206

Abstract: This work presents the first held at Liverpool University measurements of pixel sensors with n-type readout implant in the p-type bulk before and after irradiation of samples by 24 GeV protons to doses 7×10¹⁵ and 1.5×10¹⁶ protons/cm². A comparison is given for two measurement techniques; one based on the FE-I3 readout chip designed for the ATLAS and the other using the ASIC chip developed for the LHCb experiments at CERN.

Measurements with Irradiated 3D Silicon Strip Detectors
M. Köhler, R. Bates, G.-F. Dalla Betta, C. Fleta, J. Härkönen, K. Jakobs, M. Lozano, T. Mäenpää, H. Moilanen, C. Parkes, U. Parzefall, G. Pellegrini, H. Sadrozinski, L. Spiegel, L. Wiik
Nuclear Physics B – Proc. Suppl., Vol. 215, Issue 1, June 2011, Pages 247-249
doi:10.1016/j.nuclphysbps.2011.04.021

Abstract: For the unprecedentedly high radiation level at the sLHC, the luminosity upgrade of the LHC, new tracking detectors are investigated. Among different approaches, silicon detectors in 3D technology constitute a promising option. Columnar electrodes are etched into the substrate, therefore the distance for charge collection and depletion is decoupled from the detector thickness. Thus, two of the detrimental effects caused by radiation in silicon (increased depletion voltage and charge carrier trapping) can be reduced. Results of measurements with irradiated 3D silicon strip detectors produced by IMB-CNM are presented.

Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes
N. Pacifico, I. Dolenc Kittelmann, M. Fahrer, M. Moll, O. Militaru
Nuclear Inst. & Meth. A, Vol. 658, Issue 1, 1 December 2011, Pages 55-60
doi:10.1016/j.nima.2011.03.026

Abstract: Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280 Ω cm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8×10¹⁵/cm². The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

Performance of thin pixel sensors irradiated up to a fluence of and development of a new interconnection technology for the upgrade of the ATLAS pixel system
A. Macchiolo, L. Andricek, M. Beimforde, H.-G. Moser, R. Nisius, R.H. Richter, P. Weigell
Nuclear Inst. & Meth. A, Vol. 650, Issue 1, 11 September 2011, Pages 145-149
doi:10.1088/1748-0221/6/11/C11022

Abstract: The electrical properties of hadron irradiated silicon detectors change over several years after irradiation. This annealing process has a strong dependence on temperature and it can be accelerated or decelerated by lowering or elevating the temperature at which the sensors are kept. This is exploited to investigate the long term behaviours of irradiated silicon detectors that are, or will be, installed in the experiment at the current and upgraded LHC at CERN. Elevated temperatures (up to 80°C) are used to accelerate the effect of annealing to study the expected changes of the sensor performances over several years of room temperature equivalent time. Low temperatures are applied to the sensors also when not operated to suppress undesired effects of annealing. The acceleration factors with respect to nominal room temperature (RT = 20°C) have been established monitoring the changes of the capacitance-voltage characteristics (CV) with time at various temperatures. In the experiments, the maximum high temperature envisaged out of operation cannot exceed much 20°C. It is important to measure the changes of the relevant parameters (charge collection reverse current, noise) at this temperature to verify the annealing behaviours in realistic conditions for planning the operation scenario (i.e. bias voltage and temperature during and outside operation) of the silicon sensors. We show here the study of room temperature annealing of the charge collection, reverse current and noise of silicon microstrip detectors after two doses of hadron irradiation (2 and 10 × 10¹⁵ n_eq cm⁻²) . These doses are chosen to represent the expected levels in the future upgrade of the LHC at CERN (High Luminosity LHC, HL-LHC) for the microstrip and pixel layers. The measurements show that a suitable choice of annealing time at 20°C can partially recover the degraded charge collection and reduce the reverse current after a given dose of hadron irradiation.

Changes of the particle detection properties of irradiated silicon microstrip sensors after room temperature annealing
G. Casse, A. Affolder, P. P. Allport, V. Chmill, D. Forshaw, A. Greenall, I. Tsurin, T. Huse
Journal of Instrumentation, 2011, vol. 6, Issue 11, Article C11022
Proceedings of the 13th International Workshop on Radiation Imaging Detectors (IWORID)
doi:10.1088/1748-0221/6/11/C11022

Abstract: The electrical properties of hadron irradiated silicon detectors change over several years after irradiation. This annealing process has a strong dependence on temperature and it can be accelerated or decelerated by lowering or elevating the temperature at which the sensors are kept. This is exploited to investigate the long term behaviours of irradiated silicon detectors that are, or will be, installed in the experiment at the current and upgraded LHC at CERN. Elevated temperatures (up to 80°C) are used to accelerate the effect of annealing to study the expected changes of the sensor performances over several years of room temperature equivalent time. Low temperatures are applied to the sensors also when not operated to suppress undesired effects of annealing. The acceleration factors with respect to nominal room temperature (RT = 20°C) have been established monitoring the changes of the capacitance-voltage characteristics (CV) with time at various temperatures. In the experiments, the maximum high temperature envisaged out of operation cannot exceed much 20°C. It is important to measure the changes of the relevant parameters (charge collection reverse current, noise) at this temperature to verify the annealing behaviours in realistic conditions for planning the operation scenario (i.e. bias voltage and temperature during and outside operation) of the silicon sensors. We show here the study of room temperature annealing of the charge collection, reverse current and noise of silicon microstrip detectors after two doses of hadron irradiation (2 and 10 × 1015 neq cm−2) . These doses are chosen to represent the expected levels in the future upgrade of the LHC at CERN (High Luminosity LHC, HL-LHC) for the microstrip and pixel layers. The measurements show that a suitable choice of annealing time at 20°C can partially recover the degraded charge collection and reduce the reverse current after a given dose of hadron irradiation.

2010

por admin | Jun 16, 2010 | Publications, Uncategorized

A portable readout system for silicon microstrip sensors

R. Marco-Hernández
Nuclear Inst. & Meth. A, Vol. 623, Issue 1, 1 November 2010, Pages 207-209
doi:10.1016/j.nima.2010.02.197

Abstract: This system can measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system is able to operate with different types (p- and n-type) and different sizes (up to 3 cm²) of microstrip silicon sensors, both irradiated and non-irradiated. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format. The main characteristics of the system are described. Results of measurements acquired with n- and p-type detectors using both the laser and the radioactive source setup are also presented and discussed.

A beam test telescope based on the Alibava readout system
R. Marco-Hernandez, (for the Alibava Collaboration)
IEEE Nuclear Science Symposium and Medical Imaging Conference, (IEEE-NSS-MIC) Oct.-Nov, 2010
IEEE NSS-MIC Conference Record, pp.749-754,
doi: 10.1109/NSSMIC.2010.5873858

Abstract: A telescope for a beam test have been developed. The system is intended to measure the spatial resolution performance of different types of silicon detectors. The telescope has four XY measurement as well as trigger planes (XYT board). It can accommodate up to twelve devices under test (DUT board). The DUT board uses two ASIC chips for the readout of chilled DUT, microstrip or pixel silicon detectors. The XYT board triggers on the particle tracks in the beam test. It also measures the track space points using two silicon strip detectors connected to two ASIC chips. An Alibava mother board is used to read out and to control each XYT/DUT board from a common trigger signal and clock signal. A master board distributes the trigger, clock and reset signals. It also merges the data streams from up to sixteen Alibava boards. The master board is connected with the DAQ software via 100M Ethernet. Track based alignment software has also been developed for the data obtained with the DAQ software.

Characterization of irradiated P-type silicon detectors by the ALIBAVA system
M. Miñano, C. García, C. Lacasta, R. Marco-Hernández, S. Martí-García, U. Soldevila
Nuclear Inst. & Meth. A, Vol. 617, Issues 1–3, 11–21 May 2010, Pages 565-567
doi:10.1016/j.nima.2009.09.040

Abstract: The ATLAS Tracker System has been designed to withstand the radiation doses accumulated with 10 years of running at a LHC luminosity of . The operation under an upgraded luminosity of  (superluminous LHC) implies to upgrade the semiconductor tracking systems of the LHC experiments. The expected dose for the inner detector trackers at the superluminous LHC experiments is up to  equivalent neutron cm^-2 after the envisaged five years of operation. Investigations have showed arguments in favour of implementing the n-type strip readout on a p-type substrate (currently the Semiconductor Tracker, SCT, uses p-type strip readout on a n-type substrate). In order to evaluate the radiation damage p-type microstrip sensors have been irradiated with neutrons and protons at several fluxes up to . Electrical and charge collection efficiency measurements have been carried out by means of a radioactive source setup as well as by an infrared laser illumination and the measurements compared with a non-irradiated sensor as a reference. The ALIBAVA acquisition system has been used. It is a compact and portable system which contains two front-end readout ASIC chips to acquire the detector signals. One of the advantages of the ALIBAVA system is that it uses LHC speed electronics. Another one is that it performs a pulse by pulse and strip by strip analysis.

A module concept for the upgrades of the ATLAS pixel system using the novel SLID-ICV vertical integration technology
M. Beimforde, L. Andricek, A. Macchiolo, H.-G. Moser, R. Nisius, R. H. Richter, P. Weigell
Journal of Instrumentation, 2010, Vol. 5, Issue 12, Article C1202
doi: 10.1088/1748-0221/5/12/C12025

Abstract: The presented R&D activity is focused on the development of a new pixel module concept for the foreseen upgrades of the ATLAS detector towards the Super LHC employing thin n-in-p silicon sensors together with a novel vertical integration technology. A first set of pixel sensors with active thicknesses of 75 μm and 150 μm has been produced using a thinning technique developed at the Max-Planck-Institut für Physik (MPP) and the MPI Semiconductor Laboratory (HLL). Charge Collection Efficiency (CCE) measurements of these sensors irradiated with 26 MeV protons up to a particle fluence of 10¹⁶n_eqcm⁻² have been performed, yielding higher values than expected from the present radiation damage models. The novel integration technology, developed by the Fraunhofer Institut EMFT, consists of the Solid-Liquid InterDiffusion (SLID) interconnection, being an alternative to the standard solder bump-bonding, and Inter-Chip Vias (ICVs) for routing signals vertically through electronics. This allows for extracting the digitized signals from the back side of the readout chips, avoiding wire-bonding cantilevers at the edge of the devices and thus increases the active area fraction. First interconnections have been performed with wafers containing daisy chains to investigate the efficiency of SLID at wafer-to-wafer and chip-to-wafer level. In a second interconnection process the present ATLAS FE-I3 readout chips were connected to dummy sensor wafers at chip-to-wafer level. Preparations of ICV within the ATLAS readout chips for back side contacting and the future steps towards a full demonstrator module will be presented.

Development of a beam test telescope based on the Alibava readout system
Marco-Hernández R. (On behalf of the ALIBAVA Collaboration)

Topical Workshop on Electronics for Particle Physics, TWEPP. Aachen (Germany), Sep. 2010

doi:10.1088/1748-0221/6/01/C01002

Abstract: A telescope for a beam test have been developed as a result of a collaboration among the University of Liverpool, Centro Nacional de Microelectrónica (CNM) of Barcelona and Instituto de Física Corpuscular (IFIC) of Valencia. This system is intended to carry out both analogue charge collection and spatial resolution measurements with different types of microstrip or pixel silicon detectors in a beam test environment. The telescope has four XY measurement as well as trigger planes (XYT board) and it can accommodate up to twelve devices under test (DUT board). The DUT board uses two ASIC chips for the readout of chilled silicon detectors. The board could operate in a self-triggering mode. The board features a temperature sensor and it can be mounted on a rotary stage. A peltier element is used for cooling the DUT. Each XYT board measures the track space points using two silicon strip detectors connected to two ASIC chips. It can also trigger on the particle tracks in the beam test. The board includes a CPLD which allows for the synchronization of the trigger signal to a common clock frequency, delaying and implementing coincidence with other XYT boards. An Alibava mother board is used to read out and to control each XYT/DUT board from a common trigger signal and a common clock signal. The Alibava board has a TDC on board to have a time stamp of each trigger. The data collected by each Alibava board is sent to a master card by means of a local data/address bus following a custom digital protocol. The master board distributes the trigger, clock and reset signals. It also merges the data streams from up to sixteen Alibava boards. The board has also a test channel for testing in a standard mode a XYT or DUT board. This board is implemented with a Xilinx development board and a custom patch board. The master board is connected with the DAQ software via 100M Ethernet. Track based alignment software has also been developed for the data obtained with the DAQ software.

2009

por admin | Jun 16, 2009 | Publications, Uncategorized

A portable readout system for microstrip silicon sensors
R. Marco-Hernandez (on behalf of the ALIBAVA Collaboration)
IEEE Trans.Nucl.Sci. Vol. 56, pp.1642-1649, 2009
doi:10.1109/TNS.2009.2017261

Abstract: A readout system for microstrip silicon sensors has been developed. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format. The main characteristics of the system will be described. Results of measurements acquired with n-type and p-type non-irradiated detectors using both the laser and the radioactive source setup will be also presented and discussed. © 2006 IEEE.

Characterization of irradiated P-type silicon detectors by the ALIBAVA system
M. Minano, C. Garcia, C. Lacasta, R. Marco-Hernandez, S. Marti-Garcia, U. Soldevila
11th Pisa Meeting on Advanced Detectors, May 2009, Isola Elba, Italy
Nuclear Inst. & Meth. A, Vol. 617, Issue 1-3, Pages 565-567
doi:10.1016/j.nima.2009.09.040

2008

por admin | Jun 16, 2008 | Publications, Uncategorized

A Portable Readout System for Microstrip Silicon Sensors (ALIBAVA)
R. Marco-Hernandez (for the ALIBAVA Collaboration)
IEEE Nuclear Science Symposium and Medical Imaging Conference (IEEE NSS-MIC), Oct. 2008, Dresden, Germany
2008 IEEE NSS-MIC Conference Record, pp.3201-3208 (Pages: 2476-2483)
doi: 10.1109/NSSMIC.2008.4775030

Abstract: A readout system for microstrip silicon sensors has been developed as a result of a collaboration among the University of Liverpool, the CNM (Centro Nacional de Microelectrónica) of Barcelona and the IFIC (Instituto de Física Corpuscular) of Valencia. The name of this collaboration is ALIBAVA and it is integrated in the RD50 Collaboration. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256, as an analogue measurement. The system uses two ASIC chips to read out the detector(s). The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the SLHC, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the SLHC operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. This acquired data is sent by USB to be stored in a PC for a further processing. The hardware is a dual board based system. The daughterboard is a small board intended for containing two ASIC readout chips as well as fan-ins and detector support to interface the sensors. The motherboard is intended to process the data, to control the whole hardware and to communicate with the software by USB. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format file. The main characteristics of the system will be described. Results of measurements acquired with n-type and p-type non-irradiated detectors using both the laser and the radioactive source setup will be also presented and discussed.

A portable readout system for microstrip silicon sensors (ALIBAVA)
M. Lozano, G.Pellegrini, G. Casse
3th Workshop on Advanced Silicon Radiation Detectors, 14-16 April, Barcelona, Spain
http://indico.cern.ch/conferenceDisplay.py?confId=28165

Abstract: The meeting aims to provide an overview of the results obtained with p-type and 3D sensors and to consider these results in the light of the most demanding requirements at future detectors (both pixels and micro-strips). The organisers think it is important that colleagues from the 3D, pixel (planar and 3D) and microstrip communities meet to present state of the art developments in sensors and connectivity and have time to discuss these. This need emerged, for example, during the last 2007 ATLAS upgrade workshop in Valencia, where the density of the programme limited the time available for discussion. As part of the Barcelona meeting, it is our intention to present to potential users a 40MHz read-out data acquisition system based around the ASIC analogue chip, the ALIBAVA system

2007

por admin | Jun 16, 2007 | Publications, Uncategorized

A readout system for microstriip silicon sensors (ALIBAVA)
R. Marco-Hernández, J. Bernabeu, G. Casse, C. García, A. Greenall, C. Lacasta, M. Lozano, S. Martí i García,  R. Martinez, M. Miñano, G. Pellegrini, N. A. Smith, M. Ullán
Topical Workshop on Electronics for Particle Physics (TWEPP), Prague, Sep. 2007
http://indico.cern.ch/conferenceDisplay.py?confId=11994

Abstract: A portable readout system for micro-strip silicon sensors has been developed. The system uses an analogue pipelined readout chip, which was developed for the LHC experiments. The system will be used to characterise the properties of both non-irradiated and irradiated micro-strip sensors. Heavily irradiated sensors will be operated at the Super LHC. The system hardware has two main parts: a daughter board and a mother board. The daughter board contains two readout chips, analogue data buffering, power supply regulation and chip-to-sensor fan-in structures.. The mother board is intended to process the analogue data that comes from the readout chips and from external trigger signals, to control the whole system and to communicate with a PC via USB. There is provision for an external trigger input (e.g. scintillator trigger) and a synchronised trigger output for pulsing an external excitation source (e.g. laser system). A prototype of the system will be presented as well as early measurements operating a silicon micro-strip sensor in a laser setup.