Beam Intensity Monitor
Transmissive photodiode: DDS1- XXX/X
The DDS1 photodiode is used for diagnostic X-ray applications
- P-on-N silicon detector
- Two available square active area: 5x5 mm2 or 10x10 mm2
- Thickness: 10 μm
- Very high transmission in a wide range of energies
- No external voltage is needed for operation
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Dimensions: 41x68x12 mm3
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Easily mounted in experiment
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The beam intensity is measured by output current
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Depletion layer thickness (bias = 0): 7 µm
General Features
DDS1 photodiode is based on a Silicon detector fabricated on a 10 μm thick substrate. Because of the low noise (dark current, in the pA range), very low radiation intensities can be measured reliably. Si photodiode has good responsivity uniformity and provides a good stability after burn-in.
Specifications (electro-optical characteristics at 25ºC)
Model No. |
Active area (mm2) |
BreakdownVoltage(1)(V) |
DarkCurrent(2) (pA) |
CapacitanceC(2) (nF) |
ShuntResistance (MΩ) |
SensitivityS(3) (A/W) |
Max storage Te(oC) |
AS04-110A 10x10mm2 |
68.9 |
16.7 |
1.20 |
0.275 |
230 |
0.035 |
80 |
AS04-105A 5x5mm2 |
28.1 |
14.6 |
0.13 |
0.123 |
420 |
(1): 1 µAReverse current, (2): measured at 0V, (3): measured at 8 keV
Experimental results
Wide energy range. Transmission level above 80% at 8 keV and 94% at 12 keV.
Responsivity uniformity better than 5% inside the active area.
Drawing - packaging printed circuit board
A-anode, C-cathode
5x5 mm2 and 10x10 mm2 Si photodiode |
Accessory P1 (optional)
Optional packaging
Two Lemo connected(ERN.00.250.GTL)
Actived area limited to 50.25 mm2
Two interchangeable kapton windows
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Nomenclature The photodiodes follow the below nomenclature. All part numbers start with:
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Typical applications Diagnostic X-ray applications and real-time X-ray beam position monitor for synchroton beamlines Application circuit:
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Further information