Beam Intensity Monitor

 

Transmissive photodiode: DDS1- XXX/X

The DDS1 photodiode is used for diagnostic X-ray applications

• P-on-N silicon detector
• Two available square active area: 5x5 mm² or 10x10 mm²
• Thickness: 10 μm
• Very high transmission in a wide range of energies
• No external voltage is needed for operation

• Dimensions: 41x68x12 mm³
  

• Easily mounted in experiment

• The beam intensity is measured by output current

• Depletion layer thickness (bias = 0): 7 µm

 

General Features

DDS1 photodiode is based on a Silicon detector fabricated on a 10 μm thick substrate. Because of the low noise (dark current, in the pA range), very low radiation intensities can be measured reliably. Si photodiode has good responsivity uniformity and provides a good stability after burn-in.

 

Specifications (electro-optical characteristics at 25ºC)

Model No.	Active area (mm2)	BreakdownVoltage(1)(V)	DarkCurrent(2) (pA)	CapacitanceC(2) (nF)	ShuntResistance (MΩ)	SensitivityS(3) (A/W)	Max storage Te(oC)
AS04-110A 10x10mm2	68.9	16.7	1.20	0.275	230	0.035	80
AS04-105A 5x5mm2	28.1	14.6	0.13	0.123	420

 (1): 1 µAReverse current, (2): measured at 0V, (3): measured at 8 keV

Experimental results

Wide energy range. Transmission level above 80% at 8 keV and 94% at 12 keV.
Responsivity uniformity better than 5% inside the active area.

 

 

Drawing - packaging printed circuit board A-anode, C-cathode 5x5 mm2 and 10x10 mm2 Si photodiode	Accessory P1 (optional)     Optional packaging Two Lemo connected(ERN.00.250.GTL) Actived area limited to 50.25 mm2 Two interchangeable kapton windows
Nomenclature The photodiodes follow the below nomenclature. All part numbers start with: [chip area]mm2 [optional packaging] [] Value [] Value 1010 100 P1   1005 25	Typical applications Diagnostic X-ray applications and real-time X-ray beam position monitor for synchroton beamlines Application circuit:

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Further information