Transmissive photodiode: DDS1- XXX/X

The DDS1 photodiode is used for diagnostic X-ray applications

• P-on-N silicon detector
• Two available square active area: 5×5 mm² or 10×10 mm²
• Thickness: 10 μm
• Very high transmission in a wide range of energies
• No external voltage is needed for operation
• Dimensions: 41x68x12 mm³
• Easily mounted in experiment
• The beam intensity is measured by output current
• Depletion layer thickness (bias = 0): 7 µm

General Features

DDS1 photodiode is based on a Silicon detector fabricated on a 10 μm thick substrate. Because of the low noise (dark current, in the pA range), very low radiation intensities can be measured reliably. Si photodiode has good responsivity uniformity and provides a good stability after burn-in.

Specifications (electro-optical characteristics at 25ºC)

Experimental results

Wide energy range. Transmission level above 80% at 8 keV and 94% at 12 keV.
Responsivity uniformity better than 5% inside the active area.

Further information